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          功率MOS
          
			  
          
	
          


          
	  
          
		
		 
	  
          
	
          




          


          
	
          
		
		產(chǎn)品展示MOSFET功率MOS			
          



          

          
	
   
  	
   
          
		
          
		 
          
		   NCE12P09S
		 
          
		 
          
		   
          NCE12P09S
          
		   
          Description
The NCE12P09S uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages .This device is suitable for use as a load switching
application and a wide variety of other applications. General Features ● VDS = -12V,ID = -9A
RDS(ON) < 22m? @ VGS=-2.5V RDS(ON) < 18m? @ VGS=-4.5V ● Advanced trench MOSFET process techno
          
		 
          
	   
          
	   
	   
          
	      
           
          
			
          
									
          Description
The NCE12P09S uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages .This device is suitable for use as a load switching
application and a wide variety of other applications. 
          General Features 
          ● VDS = -12V,ID = -9A
RDS(ON) < 22mΩ @ VGS=-2.5V 
          RDS(ON) < 18mΩ @ VGS=-4.5V 
          ● Advanced trench MOSFET process technology 
          ● Ultra low on-resistance with low gate charge
Application
           ● PWM applications 
          ● Load switch 
          ● Battery charge in cellular handset

          

							
          
			
		  			
          
								 
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          NCE2333Y